byw52...byw56 vishay telefunken 1 (4) rev. 4, 27-sep-00 www.vishay.com document number 86049 silicon mesa rectifiers features controlled avalanche characteristics glass passivated junction hermetically sealed package low reverse current high surge current loading applications rectifier, general purpose 94 9539 absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit byw52 200 reverse voltage byw53 v 400 r everse vo lt age= re p etitive p eak reverse voltage BYW54 v r = v rrm 600 v re etitive eak reverse voltage byw55 v rrm 800 byw56 1000 peak forward surge current t p =10ms, half sinewave i fsm 50 a repetitive peak forward current i frm 12 a average forward current j =180 i fav 2 a pulse avalanche peak power t p =20 s half sinus wave, t j =175 c p r 1000 w pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r =1a, t j =175 c e r 20 mj i 2 * trating i 2 *t 8 a 2 *s junction and storage temperature range t j =t stg 55...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=10mm, t l =constant r 45 k/w junction ambient on pc board with spacing 25mm r thja 100 k/w
byw52...byw56 vishay telefunken 2 (4) rev. 4, 27-sep-00 www.vishay.com document number 86049 electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =1a v f 0.9 1.0 v reverse current v r =v rrm i r 0.1 1 a v r =v rrm , t j =100 c i r 5 10 a breakdown voltage i r =100 a, t p /t=0.01, t p =0.3ms v (br) 1600 v diode capacitance v r =4v, f=1mhz c d 18 pf reverse recovery time i f =0.5a, i r =1a, i r =0.25a t rr 4 s y i f =1a, di/dt=5a/ s, v r =50v t rr 4 s reverse recovery charge i f =1a, di/dt=5a/ s q rr 200 nc characteristics (t j = 25 c unless otherwise specified) 0 0 20 40 60 80 120 r therm. resist. junction / ambient ( k/w ) thja l lead length ( mm ) 94 9101 51015 25 30 20 100 ll t l =constant figure 1. typ. thermal resistance vs. lead length i forward current ( a) 0.001 0.010 0.100 1.000 10.000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v f forward voltage ( v ) 16350 f t j =25 c t j = 175 c figure 2. forward current vs. forward voltage 0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 160 180 t amb ambient temperature ( c ) 16351 i average forward current ( a ) fav v r =v rrm half sinewave r thja =45k/w l=10mm r thja =100k/w pcb: d=25mm figure 3. max. average forward current vs. ambient temperature 1 10 100 1000 25 50 75 100 125 150 175 t j junction temperature ( c ) 16352 v r = v rrm i reverse current ( a ) r figure 4. reverse current vs. junction temperature
byw52...byw56 vishay telefunken 3 (4) rev. 4, 27-sep-00 www.vishay.com document number 86049 0 50 100 150 200 250 300 350 400 25 50 75 100 125 150 175 t j junction temperature ( c ) 16353 v r = v rrm p reverse power dissipation ( mw ) r p r limit @100%v r p r limit @80%v r figure 5. max. reverse power dissipation vs. junction temperature 0 5 10 15 20 25 30 35 40 0.1 1.0 10.0 100.0 v r reverse voltage ( v ) 16354 c diode capacitance ( pf ) d f=1mhz figure 6. diode capacitance vs. reverse voltage 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( s ) 94 9178 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 i frm repetitive peak forward current ( a ) 10 0 10 1 v rrm = 1000 v, r thja =100k/w t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 t amb =25 c t amb =45 c t amb =60 c t amb =70 c t amb = 100 c figure 7. thermal response dimensions in mm cathode identification ? 3.6 max. ? 0.82 max. 4.2 max. sintered glass case sod 57 weight max. 0.5 g technical drawings according to din specifications 94 9538 26 min. 26 min.
byw52...byw56 vishay telefunken 4 (4) rev. 4, 27-sep-00 www.vishay.com document number 86049 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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